2SK2085 silicon n-channel mos fet ade-208-1343 (z) 1st. edition mar. 2001 application high speed power switching features low on-resistance high speed switching low drive current 4 v gate drive device can be driven from 5 v source suitable for switching regulator, dc - dc converter outline to-92 mod 1. source 2. drain 3. gate 3 2 1 d g s
2SK2085 2 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v dss 100 v gate to source voltage v gss 20 v drain current i d 1.0 a drain peak current i d(pulse) * 1 4.0 a body to drain diode reverse drain current i dr 1.0 a channel dissipation pch* 2 0.9 w channel temperature tch 150 c storage temperature tstg ?5 to +150 c notes 1. pw 10 m s, duty cycle 1 % 2. value at tc = 25 c
2SK2085 3 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 100 v i d = 10 ma, v gs = 0 gate to source breakdown voltage v (br)gss 20 v i g = 100 m a, v ds = 0 gate to source leak current i gss 10 m av gs = 16 v, v ds = 0 zero gate voltage drain current i dss 100 m av ds = 80 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.0 2.0 v i d = 1 ma, v ds = 10 v static drain to source on state resistance r ds(on) 0.6 0.9 w i d = 0.5 a v gs = 10 v* 1 0.75 1.35 w i d = 0.5 a v gs = 4 v* 1 forward transfer admittance |y fs | 0.7 1.2 s i d = 0.5 a v ds = 10 v* 1 input capacitance ciss 130 pf v ds = 10 v output capacitance coss 50 pf v gs = 0 reverse transfer capacitance crss 12 pf f = 1 mhz turn-on delay time t d(on) ? ?si d = 0.5 a rise time t r 6.5 ns v gs = 10 v turn-off delay time t d(off) 55 ns r l = 60 w fall time t f ?0?s body to drain diode forward voltage v df 0.85 v i f = 1.0 a, v gs = 0 body to drain diode reverse recovery time t rr 80 ns i f = 1.0 a, v gs = 0, di f / dt = 50 a / m s note 1. pulse test
2SK2085 4 1.6 1.2 0.8 0.4 0 channel dissipation pch (w) 50 100 150 200 ambient temperature ta ( c) power vs. temperature derating drain to source voltage v (v) ds drain current i (a) d maximum safe operation area 10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 0.1 0.3 1 3 10 30 100 200 operation in this area is limited by r ds(on) 1 ms 10 ? 100 ? pw = 10 ms (1shot) ta = 25? dc operation 5 4 3 2 1 0 246810 drain to source voltage v (v) ds drain current i (a) d typical output characteristics 10 v 8 v 6 v 5 v 4 v pulse test 3 v v = 2 v gs 2.5 v 3.5 v 5 4 3 2 1 0 12345 gate to source voltage v (v) gs drain current i (a) d typical transfer characteristics v = 10 v pulse test ds tc = 25 ? ?5 ? 75 ?
2SK2085 5 1.0 0.8 0.6 0.4 0.2 0246810 gate to source voltage v (v) gs v (v) ds(on) drain to source saturation voltage vs. gate to source voltage 1 a 0.5 a i = 0.2 a d pulse test drain to source saturation voltage drain current i (a) d drain to source on state resistance r ( ) w ds(on) static drain to source state resistance vs. drain current 0.1 2 1 0.1 0.2 0.5 0.2 0.5 1 2 5 10 v v = 4 v gs pulse test 2.0 1.6 1.2 0.8 0.4 ?0 0 40 80 120 160 case temperature tc (?) 0 r ( ) ds(on) static drain to source on state resistance w pulse test 10 v v = 4 v gs static drain to source on state resistance vs. temperature i = 1 a d 0.5 a 0.2 a 1 a 0.5 a 0.2 a forward transfer admittance |yfs| (s) drain current i (a) d forward transfer admittance vs. drain current 10 2 1 0.2 0.1 0.5 5 0.05 0.1 0.2 0.5 1 2 5 tc = ?5 ? 25 ? 75 ? ds v = 10 v pulse test
2SK2085 6 reverse drain current i (a) dr reverse recovery time trr (ns) body to drain diode reverse recovery time 200 100 20 10 50 0.02 0.05 0.1 0.2 0.5 1 2 di / dt = 50 a / s v = 0, ta = 25 c gs 0 capacitance c (pf) drain to source voltage v (v) ds typical capacitance vs. drain to source voltage 10 20 30 40 50 1000 100 10 1 ciss coss crss v = 0 f = 1 mhz gs 200 160 120 80 40 0 gate charge qg (nc) drain to source voltage v (v) ds 20 16 12 8 4 0 gate to source voltage v (v) gs dynamic input characteristics 286810 v = 25 v 50 v 80 v dd v = 25 v 50 v 80 v dd v gs ds v i = 1 a d drain current i (a) d switching time t (ns) switching characteristics 200 100 50 20 10 5 2 0.02 0.05 0.1 0.2 0.5 1 2 t f r t d(on) t d(off) t v = 10 v v = 30 v pw = 2 ? duty < 1 % gs dd
2SK2085 7 5 4 3 2 1 0 0.4 0.8 1.2 1.6 2.0 source to drain voltage v (v) sd reverse drain current i (a) dr reverse drain current vs. source to drain voltage pulse test v = 0, ? v gs 10 v 5 v vin monitor d.u.t. vin 10 v r l v = 30 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 50 w 90% 10% t f switching time test circuit waveform
2SK2085 8 package dimensions 0.60 max 0.55max 4.8 0.4 3.8 0.4 8.0 0.5 0.7 2.3 max 10.1 min 0.5max 1.27 2.54 0.65 0.1 0.75 max hitachi code jedec eiaj mass (reference value) to-92 mod conforms 0.35 g as of january, 2001 unit: mm
2SK2085 9 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0
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